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parameter max. units v ces collector-to-emitter breakdown voltage 1200 v i c @ t c = 25c continuous collector current 45 i c @ t c = 100c continuous collector current 24 a i cm pulsed collector current 180 i lm clamped inductive load current 180 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 170 mj p d @ t c = 25c maximum power dissipation 200 p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) c mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) IRG4PH50UPBF ultra fast speed igbt insulated gate bipolar transistor e c g n-channel to-247ac features benefits v ces = 1200v v ce(on) typ. = 2.78v @v ge = 15v, i c = 24a parameter typ. max. units r jc junction-to-case ??? 0.64 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient, typical socket mount ??? 40 wt weight 6 (0.21) ??? g (oz) thermal resistance absolute maximum ratings w ? ultrafast: optimized for high operating frequencies up to 40 khz in hard switching, >200 khz in resonant mode ? new igbt design provides tighter parameter distribution and higher efficiency than previous generations ? optimized for power conversion; smps, ups and welding ? industry standard to-247ac package ? lead-free ? higher switching frequency capability than competitive igbts ? highest efficiency available ? much lower conduction losses than mosfets ? more efficient than short circuit rated igbts 04/26/04 www.irf.com 1 pd - 95191
IRG4PH50UPBF 2 www.irf.com parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ? ? v v ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 1.20 ? v/c v ge = 0v, i c = 1.0ma ? 2.56 3.5 i c = 20a ? 2.78 3.7 i c = 24a v ge = 15v ? 3.20 ? i c = 45a see fig.2, 5 ? 2.54 ? i c = 24a , t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -13 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 23 35 ? s v ce = 100v, i c = 24a ? ? 250 v ge = 0v, v ce = 1200v i ces zero gate voltage collector current ? ? 2.0 a v ge = 0v, v ce = 24v, t j = 25c ? ? 5000 v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 160 250 i c = 24a q ge gate - emitter charge (turn-on) ? 27 40 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 53 83 v ge = 15v t d(on) turn-on delay time ? 35 ? t r rise time ? 15 ? t j = 25c t d(off) turn-off delay time ? 200 350 i c = 24a, v cc = 960v t f fall time ? 290 500 v ge = 15v, r g = 5.0 ? e on turn-on switching loss ? 0.53 ? energy losses include "tail" e off turn-off switching loss ? 1.41 ? mj see fig. 9, 10, 14 e ts total switching loss ? 1.94 2.6 t d(on) turn-on delay time ? 31 ? t j = 150c t r rise time ? 18 ? i c = 24a, v cc = 960v t d(off) turn-off delay time ? 320 ? v ge = 15v, r g = 5.0 ? t f fall time ? 280 ? energy losses include "tail" e ts total switching loss ? 5.40 ? see fig. 11, 14 e on turn-on switching loss ? 0.35 ? t j = 25c , v ge = 15v, r g = 5.0 ? e off turn-off switching loss ? 1.43 ? i c = 20a, v cc = 960v ? 1.78 2.9 energy losses include "tail" ? 4.56 ? see fig. 9, 10, 11, 14, t j = 150c l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 3600 ? v ge = 0v c oes output capacitance ? 160 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 31 ? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) v switching characteristics @ t j = 25c (unless otherwise specified) ns mj repetitive rating; pulse width limited by maximum junction temperature. pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 5.0 ? , (see fig. 13a) v ce(on) collector-to-emitter saturation voltage mj ns e ts total switching loss
IRG4PH50UPBF www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0 20 40 60 0.1 1 10 100 f , fre q uenc y ( khz ) load current (a) a 60% of rated voltage i ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = 40w triangular wave: i clamp voltage: 80% of rated 1 10 100 1000 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j o t = 150 c j o 1 10 100 1000 5 6 7 8 9 10 11 12 v , gate-to-emitter volta g e (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j o t = 150 c j o
IRG4PH50UPBF 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 2.0 2.5 3.0 3.5 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 12 c i = a 24 c i = a 48 c 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) maximum dc collector current(a) c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
IRG4PH50UPBF www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 24a cc c 1 10 100 0 1000 2000 3000 4000 5000 6000 7000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res

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IRG4PH50UPBF 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 1 10 100 1000 1 10 100 1000 10000 v = 20v t = 125 c ge j o v , collector-to-emitter volta g e (v) i , collector-to-emitter current (a) ce c safe operating area
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IRG4PH50UPBF www.irf.com 7 960v 4 x i c @ 25c d.u.t. 50v l v * c * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ow er su p p l y , p ulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 960v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 960v
IRG4PH50UPBF 8 www.irf.com to-247ac part marking information example: as s e mb led on ww 35, 2000 lot code 5657 wit h as s e mb l y t his is an irfpe30 in t he as s embly line "h" 035h logo internat ional rectifier irfpe30 lot code as s e mb l y 56 57 part number dat e code ye ar 0 = 2000 we e k 35 line h note: "p" in assembly line position indicates "lead-free" to-247ac package outline dimensions are shown in millimeters (inches) data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/04
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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